Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures

Voltage control of magnetic order is desirable for spintronic device applications, but 180° magnetization switching not straightforward because electric fields do break time-reversal symmetry. Ferrimagnets are promising candidates owing to a multi-sublattice configuration with opposing moments different magnitudes. In this study we used solid-state hydrogen gating the ferrimagnetic in rare earth–transition metal thin films dynamically. Electric field-induced loading/unloading GdCo can shift compensation temperature by more than 100 K, which enables dominant sublattice. X-ray circular dichroism measurements and ab initio calculations indicate that originates from weakening antiferromagnetic exchange coupling reduces Gd Co upon hydrogenation. We observed reversible, gate voltage-induced net full Néel vector reversal absence external fields. Furthermore, generated spin textures, such as chiral domain walls skyrmions, racetrack devices through gating. With times short 50 μs endurance 10,000 cycles, our method provides powerful means tune textures dynamics, broad applicability rapidly emerging field spintronics.